Random Surface Texturing of mc-Silicon for Solar Cells with Picosecond Lasers; a Comparison between 1064 nm, 532 nm and 355 nm Laser Emission Wavelengths
Multicrystalline Silicon was textured with picosecond laser. Different laser wavelengths (λ = 1064, 532, 355 nm) where compared regarding laser-induced damage. We found that λ = 355 nm picosecond radiation resulted in shallower defect-reach region.