The approach can be used for example in Cu(InGa)Se2 films structuring where the single cell interconnection is not obtained by absorber layer removal followed by upper transparent conductive film deposition, but rather by changing Cu(InGa)Se2 film properties from not electrical conductive to locally conductive layer. As a result a number of advantages respect to more conventional techniques, like the absence of re-deposited material near the scribe, it produces narrow scribe lines and, last but not least, it is performed with low average power, state of the art pulsed IR Fiber Laser.